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| Semiconductor SUD494J Silicon epitaxial planar Diode Features * * * * Ultra high speed Fast reverse recovery time : trr=1.6ns(Typ.) Small total capacitance : CT=2.2pF(Typ.) Three SDS914 chips in SOT-363 package Ordering Information Type NO. SUD494J Marking EX Package Code SOT-363 Outline Dimensions 2.1 BSC 1.25 BSC 3 2 1 unit : mm 1 2 0.15~0.30 6 1.30 BSC 5 4 3 2.0 BSC 4 5 6 0.90.1 0~0.1 0.1~0.25 0.25 Min. PIN Connections 1. Cathode 2. Cathode 3. Cathode 4. Anode 5. Anode 6. Anode KSD-6002-001 1 SUD494J Absolute maximum ratings Characteristic Maximum(peak) reverse voltage Reverse voltage Maximum(peak) forward current Average forward current Surge current(10ms) Power dissipation Junction temperature Storage temperature Ta=25C Symbol VRM VR IFM IO IFSM PD Tj Tstg Ratings 85 80 300 100 2 150 150 -55 ~ 150 Unit V V mA mA A mW C C Electrical Characteristics Characteristic Forward voltage Ta=25C Symbol VF(1) VF(2) VF(3) IR CT Test Condition IF=1mA IF=10mA IF=100mA VR=80V VR=0, f=1MHz IF=10mA Min. Typ. Max. 0.6 0.7 0.9 2.2 1.6 1.2 0.5 4.0 4.0 Unit V Reverse current Total capacitance Reverse recovery time A pF trr ns KSD-6002-001 2 SUD494J Electrical Characteristic Curves Fig. 1 IF-VF Fig. 2 IR-VR Fig. 3 CT-VR Fig. 4 trr-IF Fig. 5 Reverse recovery time(trr) test circuit KSD-6002-001 3 |
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